Title :
MOVPE growth and optical properties of wurtzite InP nanowires with radial InP/InAsP quantum wells
Author :
Kawaguchi, Kenichi ; Heurlin, Magnus ; Lindgren, David ; Borgström, Magnus T. ; Samuelson, Lars
Author_Institution :
Solid State Phys., Lund Univ., Lund, Sweden
Abstract :
MOVPE growth and optical properties of wurtzite (WZ) InP nanowires (NWs) with radial InAsP/InP quantum wells (QWs) were investigated. InAsP QWs with a pure WZ crystal phase structure were grown using pure WZ-InP NW cores with the crystalline structure controlled by sulphur doping. Single NWs showed photoluminescence attributed to the InAsP QW with WZ crystal phase structure, and peak energy shifts related to the QW width were observed.
Keywords :
III-V semiconductors; MOCVD; arsenic compounds; crystal structure; indium compounds; nanofabrication; nanowires; photoluminescence; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InAsP-InP; MOVPE; optical properties; peak energy shifts; photoluminescence; radial quantum wells; sulphur doping; wurtzite crystal phase structure; wurtzite nanowires; Crystals; Diffraction; Gold; Indium phosphide; Substrates; X-ray diffraction;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
