Title :
Photoluminescence peak wavelength behavior of InAs/InGaAsP/InP quantum dots structure
Author :
Fukuda, Ayako ; Esaki, Miyuki ; Akimoto, Mio ; Imai, Hajime
Author_Institution :
Fac. of Sci., Japan Women´´s Univ., Tokyo, Japan
Abstract :
We measured the photoluminescence (PL) spectra of InAs/InGaAsP/InP quantum dots (QD) structures. We examined the relationship between the sample temperature and PL peak wavelength. The polarization of the excitation light was changed from the TM mode to the TE mode. We compared relations of a shift of the PL peak wavelength to the excitation light power under TM mode and TE mode excitation. We considered that the phenomenon like the band filling effect is larger for TE mode.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; InAs-InGaAsP-InP; TE mode; TM mode; band filling effect; excitation light polarization; photoluminescence spectra; quantum dot structure; Filling; Indium phosphide; Photoluminescence; Quantum dots; Temperature measurement; Wavelength measurement;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
