Title :
Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs
Author :
Morassi, Luca ; Verzellesi, Giovanni ; Larcher, Luca ; Zhao, Han ; Lee, Jack C.
Author_Institution :
DISMI, Univ. of Modena & Reggio Emilia, Modena, Italy
Abstract :
The accuracy of the split-CV mobility extraction method is analyzed in implant-free, buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric through a “simulated experiment” procedure. The different error sources affecting the method accuracy are pointed out. As a result of these errors, the split-CV mobility can appreciably underestimate the actual channel mobility under on-state conditions.
Keywords :
III-V semiconductors; MOSFET; alumina; buried layers; carrier mobility; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device measurement; semiconductor device models; InGaAs-Al2O3; alumina gate dielectric; channel mobility; error sources; implant-free buried-channel InGaAs MOS-HEMT; method accuracy; on-state conditions; simulated experiment procedure; split-CV mobility extraction method; split-CV mobility measurements; Aluminum oxide; Dielectrics; Indium gallium arsenide; Indium phosphide; Logic gates; Semiconductor device measurement;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
