Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs

Author

Morassi, Luca ; Verzellesi, Giovanni ; Larcher, Luca ; Zhao, Han ; Lee, Jack C.

Author_Institution

DISMI, Univ. of Modena & Reggio Emilia, Modena, Italy

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

3

Abstract

The accuracy of the split-CV mobility extraction method is analyzed in implant-free, buried-channel InGaAs MOS-HEMTs with Al₂O₃ gate dielectric through a “simulated experiment” procedure. The different error sources affecting the method accuracy are pointed out. As a result of these errors, the split-CV mobility can appreciably underestimate the actual channel mobility under on-state conditions.

Keywords

III-V semiconductors; MOSFET; alumina; buried layers; carrier mobility; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device measurement; semiconductor device models; InGaAs-Al₂O₃; alumina gate dielectric; channel mobility; error sources; implant-free buried-channel InGaAs MOS-HEMT; method accuracy; on-state conditions; simulated experiment procedure; split-CV mobility extraction method; split-CV mobility measurements; Aluminum oxide; Dielectrics; Indium gallium arsenide; Indium phosphide; Logic gates; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978319