High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensor

Author

Yatskiv, R. ; Grym, J. ; Zdansky, K. ; Piksova, K.

Author_Institution

Inst. of Photonics & Electron., Acad. of Sci. of the Czech Republic, Prague, Czech Republic

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

4

Abstract

Hydrogen sensing characteristics of graphite-Pd(Pt)/InP Schottky diodes fabricated by electrophoretic deposition technique were investigated. The proposed hydrogen sensors showed relatively high sensitivity response of ~10⁶ to 1000 ppm H₂ in N₂. The barrier height reduction due to hydrogen exposure was 0.35 eV and 0.37 eV for Pd and Pt based Schottky diodes respectively. Temperature dependence of the sensitivity, the barrier height variation, the ideality factor and the barrier height itself were studied. Pt based Schottky diodes show better sensitivity and shorter recovery times compared to Pd ones.

Keywords

III-V semiconductors; MIS devices; Schottky diodes; electrodeposition; electrophoresis; gas sensors; graphite; indium compounds; nanoparticles; nanosensors; palladium; platinum; C-Pd-InP; C-Pt-InP; barrier height reduction; electrophoretic deposition; high sensitivity graphite nanoparticle Schottky diode hydrogen sensor; ideality factor; temperature dependence; Capacitance-voltage characteristics; Electrodes; Electrostatic discharge; Indium phosphide; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978322