Title :
Structural evaluation of GaAs1−xBix mixed crystals by TEM
Author :
Ueda, Osamu ; Tominaga, Yoriko ; Ikenaga, Noriaki ; Yoshimoto, Masahiro ; Oe, Kunishige
Author_Institution :
Kanazawa Inst. of Technol., Tokyo, Japan
Abstract :
GaAs1-xBix/GaAs multiple quantum well (MQW) structures and GaAs1-xBix thin films (x <; 0.109) grown on (001) GaAs substrates by molecular beam epitaxy have been structurally evaluated by transmission electron microscopy. In both cases, grown-in defects such as dislocations, dislocation loops, and precipitates, composition modulated structure, and ordered structure were not observed all. From these results, it is expected that these materials are very promising for achieving high performance of MQW lasers emitting in the long wavelength range.
Keywords :
III-V semiconductors; dislocation loops; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wells; semiconductor thin films; transmission electron microscopy; GaAs; GaAs1-xBix-GaAs; TEM; composition modulated structure; dislocation loops; grown-in defects; molecular beam epitaxy; multiple quantum well laser emitters; multiple quantum well structures; precipitates; structural properties; thin films; transmission electron microscopy; Crystals; Gallium arsenide; Indium phosphide; Quantum well devices; Reflection; Substrates;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
