Title :
Heteroepitaxial bonding of GalnAs quantum wells on Si: A new approach towards photonic integration on Si for devices operating at 1.55 µm
Author :
Talneau, A. ; Chouteau, D. ; Mauguin, O. ; Largeau, L. ; Sagnes, I. ; Patriarche, G.
Author_Institution :
Lab. de Photonique et de Nanostruct., Marcoussis, France
Abstract :
Heteroepitaxial bonding of III-V materials, mainly InP on Si, without any intermediate dielectric layer, shall allow 1 55μm operating devices to be designed including nano-structuration for tailored spectral operation and no thermal limitation of performances. Bonded surfaces should be limited to the areas of active devices only. Preliminary results evidence the successful bonding of InGaAs quantum wells on Si.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated circuit bonding; integrated optics; nanophotonics; optical design techniques; semiconductor epitaxial layers; semiconductor quantum wells; GaInAs; III-V materials; InP; Si; bonded surfaces; heteroepitaxial bonding; intermediate dielectric layer; nanostructuration; photonic integration; quantum wells; wavelength 1.55 mum; Indium phosphide;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
