Title :
Strain effects on performance of AlGalnAs/InP single quantum well lasers
Author :
Sapkota, Durga Prasad ; Kayastha, Madhu Sudan ; Wakita, Koichi
Author_Institution :
Chubu Univ., Kasugai, Japan
Abstract :
We have studied the effects of compressive and tensile strain of single quantum well lasers on differential gain, transparency carriers density and threshold current density. Aluminum composition is adjusted at 0.07 and 0.09 for compressive and tensile strain respectively. In both compressive and tensile strain quantum well, the minimum threshold current density was achieved at 1.5% strain as 110 Acm-2 and 125 Acm-2 respectively, with a cavity length of 400 μm.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; current density; gallium compounds; indium compounds; internal stresses; quantum well lasers; AlGaInAs-InP; aluminum composition; compressive strain; differential gain; single quantum well lasers; tensile strain; threshold current density; transparency carriers density; Indium phosphide;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
