Low-power consumption and high-eye-margin 10 Gbit/s operation of distributed reflector laser with wirelike active regions

Author

Takahashi, Daisuke ; Lee, SeungHun ; Shindo, Takahiko ; Shinno, Keisuke ; Amemiya, Tomohiro ; Nishiyama, Nobuhiko ; Arai, Shigehisa

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

4

Abstract

By introducing 5-quantum-well wirelike active regions with thin optical confinement layers, low-power and high-speed operation of GaInAsP/InP distributed reflector (DR) laser with wirelike active regions was realized. A mask test of 10 GbE with a 20% margin was passed with a low bias current of 10 mA and the 3 dB bandwidth of 15 GHz was obtained with the bias current of 28 mA.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; distributed feedback lasers; gallium arsenide; indium compounds; optical testing; power consumption; quantum well lasers; GaInAsP-InP; bias current; bit rate 10 Gbit/s; current 10 mA; current 28 mA; distributed reflector laser; frequency 15 GHz; high-eye-margin operation; low-power consumption; mask testing; optical confinement layers; quantum-well wirelike active region; Bandwidth; Current measurement; Frequency modulation; Indium phosphide; Lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978334