InGaAs MOS-HEMTs on Si substrates grown by MOCVD

We present In_0.53Ga_0.47As-channel metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) on Si substrates grown by metalorganic chemical vapor deposition (MOCVD) for the first time. Atomic-layer-deposited (ALD) Al₂O₃ was used as gate dielectric. A low-temperature process was developed to achieve good ohmic contact and maintain material integrity. A 1-μm gate-length device shows a maximum drain current of 415 mA/mm and extrinsic transconductance of 329 mS/mm. The gate leakage current is 7.3 nA/mm at gate bias of -3V, which is six orders of magnitude lower than that of the conventional HEMT using the same heterostructure.