• DocumentCode
    549339
  • Title

    Single wavelength (non-grating) high-mesa asymmetric active-MMI all optical bi-stable laser diodes

  • Author

    Jiang, H. ; Chaen, Y. ; Hagio, T. ; Tsuruda, K. ; Jizodo, M. ; Matsuo, S. ; Hamamoto, K.

  • Author_Institution
    Interdiscipl. Grad. Sch. of Eng. Sci. (I-EggS), Kyushu Univ., Fukuoka, Japan
  • fYear
    2011
  • fDate
    22-26 May 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    High-mesa asymmetric active-MMI bi-stable laser diodes are proposed and demonstrated that resulted in single-wavelength emission (λ=1556nm, SMSR=30dB, non-grating), with all optical bi-stable switching operation, for the first time.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser stability; light interferometers; optical bistability; optical switches; quantum well lasers; InP-InGaAsP-InGaAsP-InP; high mesa asymmetric active MMI bistable laser diodes; multimode interferometer; nongrating MMI; optical bistable switching; single wavelength emission; wavelength 1556 nm; Hysteresis; Optical bistability; Optical device fabrication; Optical interferometry; Optical saturation; Optical waveguides; Refractive index;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
  • Conference_Location
    Berlin
  • Print_ISBN
    978-1-4577-1753-6
  • Electronic_ISBN
    978-3-8007-3356-9
  • Type

    conf

  • Filename
    5978340
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=549339