Title :
Single wavelength (non-grating) high-mesa asymmetric active-MMI all optical bi-stable laser diodes
Author :
Jiang, H. ; Chaen, Y. ; Hagio, T. ; Tsuruda, K. ; Jizodo, M. ; Matsuo, S. ; Hamamoto, K.
Author_Institution :
Interdiscipl. Grad. Sch. of Eng. Sci. (I-EggS), Kyushu Univ., Fukuoka, Japan
Abstract :
High-mesa asymmetric active-MMI bi-stable laser diodes are proposed and demonstrated that resulted in single-wavelength emission (λ=1556nm, SMSR=30dB, non-grating), with all optical bi-stable switching operation, for the first time.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser stability; light interferometers; optical bistability; optical switches; quantum well lasers; InP-InGaAsP-InGaAsP-InP; high mesa asymmetric active MMI bistable laser diodes; multimode interferometer; nongrating MMI; optical bistable switching; single wavelength emission; wavelength 1556 nm; Hysteresis; Optical bistability; Optical device fabrication; Optical interferometry; Optical saturation; Optical waveguides; Refractive index;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
