Title :
Scanning tunneling microscopy and spectroscopy of InAsP/InP(001) quantum dots
Author :
Fain, Bruno ; Girard, J.C. ; David, C. ; Patriarche, G. ; Largeau, L. ; Beveratos, A. ; Elvira, D. ; Robert-Philip, I. ; Beaudoin, G. ; Sagnes, I. ; Wang, Z.Z.
Author_Institution :
Lab. de Photonique et de Nanostruct., Marcoussis, France
Abstract :
InAsP/InP(001) quantum dots (QDs) grown by metal organic chemical vapor deposition (MOCVD) are very interesting nanostructures for future applications due to their emission in the C-band telecommunications window. The structural and electronic properties of InAsP/InP(001) quantum dots are investigated by cross-sectional scanning tunneling microscopy and spectroscopy at 77K (X-STM/STS). Spatially and energetically resolved differential conductance maps were acquired on several dots, yielding the spatial variations of their discrete local density of states (LDOS). In contrast to previous InAs/GaAs(001) studies, we were able to observe a large number of discrete electronic states for the InAsP/InP(001) system. We present here wave functions images for the electronic round state and four excited states which are separated by typically 50 meV from each other. At last, we present some highly energetically resolved spectroscopic measurements performed at 4K.
Keywords :
III-V semiconductors; MOCVD; arsenic compounds; electronic density of states; excited states; ground states; indium compounds; scanning tunnelling microscopy; scanning tunnelling spectroscopy; semiconductor quantum dots; wave functions; InAsP-InP; InP; MOCVD; X-STM; X-STS; cross-sectional scanning tunneling microscopy; cross-sectional scanning tunneling spectroscopy; discrete local density of states; electronic ground state; electronic properties; energetically resolved differential conductance maps; excited states; metal organic chemical vapor deposition; quantum dots; spatially resolved differential conductance maps; structural properties; temperature 4 K; temperature 77 K; wave functions; Indium phosphide; Quantum dots; Semiconductor device measurement; Tunneling; Voltage measurement; Wave functions;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
