DocumentCode :
549351
Title :
High quality photonic crystal waveguide filters based on mode-gap effect
Author :
Shahid, Naeem ; Naureen, Shagufta ; Li, Mingyu ; Swillo, Marcin ; Anand, Srinivasan
Author_Institution :
Sch. of Inf. & Commun. Technol, R. Inst. of Technol., Kista, Sweden
fYear :
2011
fDate :
22-26 May 2011
Firstpage :
1
Lastpage :
4
Abstract :
We demonstrate that the side-wall profiles of high-aspect-ratio two-dimensional (2D) photonic crystals (PhCs) in InP-based materials can be made vertical by reshaping through annealing. The annealing reduces depth and shape irregularities which are inherent to the etch-process. The efficacy of the reshaping is demonstrated by comparing the optical properties of PhC waveguides having as-etched and reshaped PhC-hole geometries. Spectral characteristics of ministop-bands (MSBs), due to coupling of third and fifth order modes with the fundamental mode, are used to qualify PhC fabrication. We demonstrate high optical quality filters based on the MSB effect (first and fifth order modes) and also use the spectral characteristics as a quality indicator of PhC fabrication. The MSBs transmission spectrum shows very sharp cut-offs for reshaped PhC waveguides. It is proposed that the reshaping process using annealing may also be beneficial for other PhC devices, nanostructure geometries and materials.
Keywords :
III-V semiconductors; annealing; etching; indium compounds; light transmission; optical fabrication; optical waveguide filters; photonic crystals; InP; annealing; etch-process; fundamental mode; high quality photonic crystal waveguide filters; high-aspect-ratio two-dimensional photonic crystals; ministop-bands; mode-gap effect; optical properties; side-wall profiles; transmission spectrum; waveguide reshaping; Annealing; Etching; Indium phosphide; Optical device fabrication; Optical filters; Optical waveguides;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
Type :
conf
Filename :
5978354
Link To Document :
بازگشت