DocumentCode :
549352
Title :
A Generic InP-based Photonic Integration Technology
Author :
Ambrosius, H.P.M.M. ; Leijtens, X.J.M. ; de Vries, T. ; Bolk, J. ; Smalbrugge, E. ; Smit, M.K.
Author_Institution :
COBRA Res. Inst., Eindhoven Univ. of Technol., Eindhoven, Netherlands
fYear :
2011
fDate :
22-26 May 2011
Firstpage :
1
Lastpage :
4
Abstract :
This paper describes a Generic InP-based Photonic Integration Technology that enables fabrication of a large variety of active- as well as passive circuits. In the COBRA clean room in Eindhoven a robust modular process flow is developed which consists of more than 10 depositions (including epitaxial growth), about 10 lithography steps (depending on the design) and more than 20 dry and wet etching steps. This process can be used to fabricate different circuits on one wafer in so-called multi-project wafer runs which allows a drastic reduction of the fabrication costs making even small-volume production economically feasible.
Keywords :
III-V semiconductors; active networks; application specific integrated circuits; electroplating; epitaxial growth; etching; indium compounds; integrated optics; integrated optoelectronics; lithography; optical modulation; optical waveguides; passive networks; phase modulation; semiconductor growth; semiconductor optical amplifiers; COBRA clean room; SiO-InP; active circuits; dry etching; epitaxial growth; lithography; multiproject wafer; passive circuits; photonic integration technology; robust modular process flow; wet etching; Etching; Indium phosphide; Lithography; Metallization; Optical waveguides; Photonics; Semiconductor waveguides;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
Type :
conf
Filename :
5978355
Link To Document :
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