A Generic InP-based Photonic Integration Technology

Author

Ambrosius, H.P.M.M. ; Leijtens, X.J.M. ; de Vries, T. ; Bolk, J. ; Smalbrugge, E. ; Smit, M.K.

Author_Institution

COBRA Res. Inst., Eindhoven Univ. of Technol., Eindhoven, Netherlands

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

4

Abstract

This paper describes a Generic InP-based Photonic Integration Technology that enables fabrication of a large variety of active- as well as passive circuits. In the COBRA clean room in Eindhoven a robust modular process flow is developed which consists of more than 10 depositions (including epitaxial growth), about 10 lithography steps (depending on the design) and more than 20 dry and wet etching steps. This process can be used to fabricate different circuits on one wafer in so-called multi-project wafer runs which allows a drastic reduction of the fabrication costs making even small-volume production economically feasible.

Keywords

III-V semiconductors; active networks; application specific integrated circuits; electroplating; epitaxial growth; etching; indium compounds; integrated optics; integrated optoelectronics; lithography; optical modulation; optical waveguides; passive networks; phase modulation; semiconductor growth; semiconductor optical amplifiers; COBRA clean room; SiO-InP; active circuits; dry etching; epitaxial growth; lithography; multiproject wafer; passive circuits; photonic integration technology; robust modular process flow; wet etching; Etching; Indium phosphide; Lithography; Metallization; Optical waveguides; Photonics; Semiconductor waveguides;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978355