Title :
A compact high-speed RTD-based reconfigurable logic gate
Author :
Lee, Jooseok ; Lee, Jongwon ; Yang, Kyounghoon
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
Abstract :
An RTD (resonant tunneling diode)-based XOR/NOR reconfigurable logic gate has been designed and fabricated for the first time by using an RTD/HBT integration technology on an InP substrate. The operation of the fabricated XOR/NOR gate was successfully confirmed up to 1.5 GHz of clock frequency. The device count used in the RTD-based XOR/NOR reconfigurable logic gate is less than half of that in the conventional CMOS-based topology.
Keywords :
heterojunction bipolar transistors; logic gates; resonant tunnelling diodes; InP; RTD-HBT integration technology; RTD-based reconfigurable logic gate; XOR-NOR reconfigurable logic gate; compact reconfigurable logic gate; frequency 1.5 GHz; high-speed reconfigurable logic gate; resonant tunneling diode; Heterojunction bipolar transistors; Integrated circuits; Logic gates; Mobile communication; Reconfigurable logic; Resonant tunneling devices; Topology;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
