Title :
Measurement of the interface specific resistivity of a heavily doped n-type InP/GaInAs heterostructure
Author :
Halevy, Ran ; Cohen, Shimon ; Gavrilov, Arkadi ; Ritter, Dan
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Abstract :
We present measurements of the specific resistivity of a heavily doped n-type InP/InGaAs interface. Transmission line measurements of an InP/GaInAs heterostructure were carried out before and after etching of the GaInAs layer between the pads. The specific interface resistivity was extracted numerically, and error bars were calculated. The obtained specific interface resistivity, averaged on several TLM structures across the wafer, was 1.7 ± 0.36 [Ω-μm2].
Keywords :
III-V semiconductors; electrical resistivity; etching; gallium arsenide; heavily doped semiconductors; indium compounds; semiconductor heterojunctions; InP-GaInAs; etching; heavily doped n-type heterostructure; interface specific resistivity; transmission line method; Analytical models; Conductivity; Electrical resistance measurement; Indium phosphide; Monte Carlo methods; Transmission line measurements;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
