• DocumentCode
    549357
  • Title

    Novel concept for a Monolithically Integrated MEMS VCSEL

  • Author

    Gruendl, Tobias ; Nagel, Robin D. ; Debernardi, Pierluigi ; Geiger, Kathrin ; Grasse, Christian ; Hager, Thomas ; Ortsiefer, Markus ; Rosskopf, Jürgen ; Boehm, Gerhard ; Meyer, Ralf ; Amann, M.-C.

  • Author_Institution
    Tech. Univ. Muenchen, Garching, Germany
  • fYear
    2011
  • fDate
    22-26 May 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We present a novel concept of a fully Monolithically Integrated MEMS VCSEL structure, called MIMS VCSEL. Its both components, the laser active medium and the electro-thermally tuned membrane on top show excellent values. The combination of the developed high-power laser showing 6.7 mW at 20°C and 3 mW at 80°C, respectively, with a widely tunable, high speed membrane (minimum bending values of 1.8 μm and tuning frequencies within 3-14 kHz) are perfect starting conditions for VCSEL devices with an aimed tuning range beyond 100 nm.
  • Keywords
    arsenic compounds; indium compounds; integrated optics; laser cavity resonators; laser tuning; membranes; micro-optomechanical devices; semiconductor lasers; surface emitting lasers; InAsP-InP; electro-thermally tuned membrane; frequency 3 kHz to 14 kHz; laser active medium; laser tuning; monolithically integrated MEMS VCSEL; power 3 mW; power 6.7 mW; temperature 20 degC; temperature 80 degC; Cavity resonators; Epitaxial growth; Indium phosphide; Laser tuning; Strain; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
  • Conference_Location
    Berlin
  • Print_ISBN
    978-1-4577-1753-6
  • Electronic_ISBN
    978-3-8007-3356-9
  • Type

    conf

  • Filename
    5978361