DocumentCode :
549362
Title :
Time resolved measurement of interface and bulk recombination of solar cell materials
Author :
Szabó, Nadine ; Schwarzburg, Klaus ; Dobrich, Anja ; Hannappel, Thomas
Author_Institution :
NaMLab, Dresden, Germany
fYear :
2011
fDate :
22-26 May 2011
Firstpage :
1
Lastpage :
4
Abstract :
We have investigated the effect of different metal organic vapor phase epitaxy (MOVPE) preparation routes for the In0.53Ga0.47As/InP interface on the interface recombination velocity and its lateral interface homogeneity. The preparation routines in a MOVPE reactor were varied in order to initiate a lateral homogenous layer growth and to form the In-GaAs/InP interface as sharp as possible, which is of major importance for the performance of thin device structures such as tunnel junctions in multi junction solar cells. For the growth characterization, we employed in situ reflectance difference/ anisotropy spectroscopy and low energy electron diffraction to depict the favorable interface formation routes. Minority carrier lifetime dependence in a corresponding InP/InGaAs/InP double hetero structure was measured with spatially resolved and time-resolved photoluminescence using a confocal single photon counting setup. It was found that a specific, III-rich termination of the underlying InGaAs layer was most favorable for optimum results.
Keywords :
III-V semiconductors; MOCVD; carrier lifetime; gallium arsenide; indium compounds; low energy electron diffraction; minority carriers; photoluminescence; reflectivity; semiconductor growth; semiconductor heterojunctions; solar cells; time resolved spectra; vapour phase epitaxial growth; In0.53Ga0.47As-InP; InP-InGaAs-InP; MOVPE reactor; bulk recombination; confocal single photon counting setup; double heterostructure; growth characterization; interface recombination velocity; lateral homogenous layer growth; lateral interface homogeneity; low energy electron diffraction; metal organic vapor phase epitaxy; minority carrier lifetime dependence; multijunction solar cells; reflectance difference-anisotropy spectroscopy; solar cell materials; spatially resolved photoluminescence; thin device structures; time-resolved photoluminescence; Indium gallium arsenide; Indium phosphide; Photonics; Surface reconstruction; Switches; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
Type :
conf
Filename :
5978366
Link To Document :
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