Title :
A 300 GHz InP/GaAsSb/InP HBT for high data rate applications
Author :
Maher, H. ; Delmouly, V. ; Rouchy, U. ; Renvoise, M. ; Frijlink, P. ; Smith, D. ; Zaknoune, M. ; Ducatteau, D. ; Avramovic, V. ; Scavennec, A. ; Godin, J. ; Riet, M. ; Maneux, C. ; Ardouin, B.
Author_Institution :
OMMIC, Limeil-Brévannes, France
Abstract :
In this paper, a fully passivated InP/GaAsSb/InP DHBT on InP substrate with excellent DC and RF performance is developed. The epi-layers are grown by the MOCVD technique, with a base layer of 25 nm and a collector layer of 130 nm. The emitter width of the transistor is 0.35 μm and the base contact is 0.3 μm wide. The base and emitter contacts present an excellent contact resistivity. The current gain of the 0.35×5μm2 transistor is equal to 21 and the breakdown voltage is equal to 4 V. The current gain cut-off frequency and the unilateral gain cut-off frequency are over 300 GHz and 380 GHz respectively. The transistor is fabricated in an industrial environment at OMMIC foundry.
Keywords :
III-V semiconductors; MOCVD; contact resistance; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; passivation; semiconductor device breakdown; semiconductor epitaxial layers; semiconductor growth; submillimetre wave transistors; InP; InP substrate; InP-GaAsSb; MOCVD; base contact; base layer; breakdown voltage; collector layer; contact resistivity; current gain cut-off frequency; emitter width; epilayers; frequency 300 GHz; frequency 380 GHz; high data rate applications; passivated DHBT; size 0.3 mum; size 0.35 mum; transistor; unilateral gain cut-off frequency; DH-HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Radio frequency; DHBT; GaAsSb; InP; Semiconductors; type II hetero-junction;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
