DocumentCode :
549372
Title :
Demonstration of a 34 nm monolithic continuously tunable VCSEL at 1.55 µm combined with liquid crystal
Author :
Castany, O. ; Paranthoen, C. ; Levallois, C. ; Shuaib, A. ; Gauthier, J.P. ; Chevalier, N. ; Durand, O. ; Dupont, L. ; Le Corre, A.
Author_Institution :
Telecom Bretagne, FOTON, Univ. Eur. de Bretagne, Rennes, France
fYear :
2011
fDate :
22-26 May 2011
Firstpage :
1
Lastpage :
4
Abstract :
A 1.55 μm emitting tunable vertical cavity surface emitting laser (VCSEL) is fabricated, using an intracavity nematic liquid crystal layer. Half cavity VCSEL are realized on InP(001), based on quantum wells associated with broadband dielectric mirror, following by the insertion of a 3 μm thick liquid crystal layer in the cavity. Room temperature laser emission is obtained in the 1.5 μm wavelength range. Single mode emission with a continuously tuning range of 34 nm is demonstrated by applying a voltage on the liquid crystal layer as low as 2.4 V. Output tunable VCSEL peak emission is polarized along the liquid crystal extraordinary axis. Considering that the full liquid crystal index variation for voltage close to 10 V results in a wavelength tuning as high as 100 nm, these preliminary results demonstrate the interest of nematic liquid crystal in achieving polarization stabilized widely tunable and monolithic VCSELs.
Keywords :
integrated optics; laser cavity resonators; laser mirrors; laser modes; laser tuning; light polarisation; nematic liquid crystals; optical fabrication; quantum well lasers; surface emitting lasers; InP; broadband dielectric mirror; half cavity VCSEL; intracavity nematic liquid crystal layer; liquid crystal extraordinary axis; liquid crystal index; monolithic continuously tunable VCSEL; polarization stability; quantum wells; single mode emission; size 3 mum; tunable vertical cavity surface emitting laser; wavelength 1.55 mum; wavelength 34 nm; wavelength tuning; Cavity resonators; Indium phosphide; Laser modes; Laser tuning; Measurement by laser beam; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
Type :
conf
Filename :
5978376
Link To Document :
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