DocumentCode :
549373
Title :
High output power (∼400 µW) oscillators at around 550 GHz using large area RTD and optimized antenna structure
Author :
Shiraishi, M. ; Shibayama, H. ; Ishigaki, K. ; Suzuki, S. ; Asada, M. ; Sugiyama, H. ; Yokoyama, H.
Author_Institution :
Interdiscipl. Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Tokyo, Japan
fYear :
2011
fDate :
22-26 May 2011
Firstpage :
1
Lastpage :
4
Abstract :
We report a room temperature operation of resonant tunneling diode (RTD) oscillators with high output power of around 400 μW at frequencies of 530-590 GHz, using large-area RTDs and an optimized structure of offset-fed slot antennas. The highest output power obtained in this study was 420 μW at 548 GHz for a single RTD with a peak current density of 24 mA/μm2; the RTD was placed 58 μm apart from the center of a 130-μm-long slot antenna.
Keywords :
current density; slot antennas; tunnel diode oscillators; current density; distance 58 mum; frequency 530 GHz to 590 GHz; high output power oscillators; large area RTD; offset-fed slot antennas; optimized antenna structure; power 420 muW; resonant tunneling diode oscillators; size 130 mum; temperature 293 K to 298 K; Indium phosphide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
Type :
conf
Filename :
5978377
Link To Document :
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