Title :
AlGaInAs based photonic devices for high-speed data transmission
Author :
Yamamoto, Tsuyoshi ; Simoyama, Takasi ; Tanaka, Shinsuke ; Matsuda, Manabu ; Uetake, Ayahito ; Okumura, Shigekazu ; Ekawa, Mitsuru ; Morito, Ken
Abstract :
Recent results on 1.3-μm-wavelength directly-modulated lasers (DMLs) and semiconductor optical amplifiers (SOAs) using AlGaInAs multi-quantum well (MQW) active layers are reported. DMLs with the concept of distributed reflector structure provide four 25.8-Gbps lasers on LAN-WDM grid operating at 50°C using the same MQW active layers as well as 40-Gbps modulation at high temperatures. Using an AlGaInAs MQW SOA, a very compact module with low-power-consumption of 0.84W is realized.
Keywords :
III-V semiconductors; aluminium compounds; data communication equipment; distributed Bragg reflector lasers; distributed feedback lasers; gallium compounds; high-speed optical techniques; indium compounds; integrated optics; integrated optoelectronics; laser beam applications; laser mirrors; local area networks; optical modulation; optical transmitters; quantum well lasers; semiconductor optical amplifiers; wavelength division multiplexing; AlGaInAs; LAN-WDM grid; SOA; bit rate 25.8 Gbit/s; bit rate 40 Gbit/s; distributed reflector structure; high-speed data transmission; integrated DBR mirrors; low-power-consumption module; multiquantum well active layers; optical modulation; photonic devices; power 0.84 W; semiconductor optical amplifiers; temperature 50 degC; wavelength 1.3 mum; wavelength directly-modulated lasers; Distributed Bragg reflectors; Fiber lasers; Modulation; Quantum well devices; Semiconductor optical amplifiers;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
