Title :
III–V on silicon for high-speed electronics and CMOS photonics
Author :
Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
Abstract :
We have proposed III-V CMOS photonics platform on which III-V high-speed electronics and III-V photonics are monolithically integrated by heterogeneous integration of III-V semiconductors on Si. III-V MOSFETs and III-V photonic wire device on Si have been successfully demonstrated by using direct wafer bonding.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOSFET; integrated optics; wafer bonding; CMOS photonics; III-V high-speed electronics; III-V semiconductors; MOSFET; Si; heterogeneous integration; monolithic integration; photonic wire device; wafer bonding; CMOS integrated circuits; Indium phosphide; MOSFETs; Optical waveguides; Photonics; Silicon; Wires;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
