On the remarkable morphological organization of homoepitaxial MOVPE InP films

Author

Gocalinska, A. ; Manganaro, M. ; Pelucchi, E.

Author_Institution

Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

4

Abstract

Here we present a systematic study of the morphology of MOVPE grown homoepitaxial indium phosphide films by means of Atomic Force Microscopy. Single layers of InP grown on (001) vicinal surfaces in temperature range spanning across 200°C were investigated with focus drawn to the behaviour of crystallographic steps on the sample surfaces in respect to the growth conditions and substrate misorientation. Direct comparison of several different surface organizations is shown, providing arguments for careful selection of the growth parameters while optimising the design for more complex structures.

Keywords

III-V semiconductors; MOCVD; atomic force microscopy; indium compounds; semiconductor epitaxial layers; semiconductor growth; surface morphology; vapour phase epitaxial growth; (001) vicinal surfaces; InP; atomic force microscopy; homoepitaxial MOVPE indium phosphide films; substrate misorientation; surface morphological organization; Epitaxial growth; Indium phosphide; Optical surface waves; Organizations; Substrates; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978397