DocumentCode :
549566
Title :
Statistical characterization of standard cells using design of experiments with response surface modeling
Author :
Miranda, Miguel ; Roussel, Philippe ; Brusamarello, Lucas ; Wirth, Gilson
Author_Institution :
Process Technol. Div., Imec, Leuven, Belgium
fYear :
2011
fDate :
5-9 June 2011
Firstpage :
77
Lastpage :
82
Abstract :
This paper presents an approach for statistical characterization of standard cells based on a combination of Statistical Design of Experiments (S-DoE) and Response Surface Modeling. Unlike both, most of the State-of-the-Art and Sensitivity Analysis (SA) techniques currently offered by EDA vendors, S-DoE preserves the underlying correlation among process variation parameters. This results in about two orders of magnitude of statistical accuracy improvement, yet it features an electrical simulation effort linear to the cell complexity. The technique is validated using a representative subset of standard cells using a 32nm statistical Physical Design Kit.
Keywords :
CMOS integrated circuits; VLSI; design of experiments; response surface methodology; sensitivity analysis; cell complexity; response surface modeling; sensitivity analysis techniques; standard cell statistical characterization; statistical design of experiments; statistical physical design kit; Accuracy; Correlation; Covariance matrix; Integrated circuit modeling; Libraries; Predictive models; US Department of Energy; DoE; Response Modeling; Statistical Standard Cell Analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design Automation Conference (DAC), 2011 48th ACM/EDAC/IEEE
Conference_Location :
New York, NY
ISSN :
0738-100x
Print_ISBN :
978-1-4503-0636-2
Type :
conf
Filename :
5981922
Link To Document :
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