مرکز منطقه ای اطلاع رساني علوم و فناوري - Critical discussion on (100) and (110) orientation dependent transport: nMOS planar and FinFET

DocumentCode :

549679

Title :

Critical discussion on (100) and (110) orientation dependent transport: nMOS planar and FinFET

Author :

Young, C.D. ; Baykan, M.O. ; Agrawal, A. ; Madan, H. ; Akarvardar, K. ; Hobbs, C. ; Ok, I. ; Taylor, W. ; Smith, C.E. ; Hussain, M.M. ; Nishida, T. ; Thompson, S. ; Majhi, P. ; Kirsch, P. ; Datta, S. ; Jammy, R.

Author_Institution :

SEMATECH, Albany, NY, USA

fYear :

2011

fDate :

14-16 June 2011

Firstpage :

Lastpage :

Abstract :

Electron mobility on (100) and (110) planar FETs and SOI FinFETs was evaluated. It is experimentally demonstrated that the (110) sidewall of FinFETs does not present a drawback in terms of electron mobility - contrary to results obtained on (110) planar MOSFETs. This is comprehensively explained by a combination of first principles and empirical approach closely matching the experimental data.

Keywords :

MOSFET; electron mobility; SOI FinFET; electron mobility; orientation dependent transport; planar MOSFET; Electron mobility; FinFETs; Logic gates; Phonons; Scattering; Strontium;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

VLSI Technology (VLSIT), 2011 Symposium on

Conference_Location :

Honolulu, HI

ISSN :

0743-1562

Print_ISBN :

978-1-4244-9949-6

Type :

conf

Filename :

5984612

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=549679