Author :
Goux, L. ; Degraeve, R. ; Govoreanu, B. ; Chou, H. -Y ; Afanas´ev, V.V. ; Meersschaut, J. ; Toeller, M. ; Wang, X.P. ; Kubicek, S. ; Richard, O. ; Kittl, J.A. ; Wouters, D.J. ; Jurczak, M. ; Altimime, L.
Abstract :
By means of conductance modeling, physical characterization, and stack engineering in 80nm-wide contact-hole cells, we clearly evidence for TiNNiONi RRAM systems that the reset switching corresponds to a partial Ni-rich filament constriction due to anodic oxidation mechanism at the interface with the Ni anode
Keywords :
anodisation; nickel compounds; random-access storage; titanium compounds; TiN-NiO-Ni; anodic-oxidation reset mechanism; conductance modeling; contact-hole cells; physical characterization; resistive RAM cells; size 80 nm; stack engineering; Anodes; MOCVD; Nickel; Oxidation; Switches; Tin; Voltage measurement;
