Title :
High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application
Author :
Tran, X.A. ; Gao, B. ; Kang, J.F. ; Wu, L. ; Wang, Z.R. ; Fang, Z. ; Pey, K.L. ; Yeo, Y.C. ; Du, A.Y. ; Nguyen, B.Y. ; Li, M.-F. ; Yu, H.Y.
Author_Institution :
Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore
Abstract :
We report a high performance unipolar RRAM with Ni-electrode/HfOx/AlOy/p+-Si structure, compatible with Si-diode selector for 3D cross-bar implementation. Highlights of the demonstrated RRAM include 1) a high on/off resistance ratio of ~105; 2) ~100% device yield on a 6-inch wafer; 3) excellent cycle-to-cycle and device-to-device uniformity of switching parameters (e.g. Vset, Vreset, and HRS/LRS currents); 4) satisfactory pulse switching endurance (>; 106 cycles); 5) high temperature retention (>;105 s @ 120 °C), and high temperature operating stability (>; 200 °C) without threshold resistive switching; 6) a fast set/rest speed of ~10/30 ns; 7) full CMOS compatible materials and process: with p+-Si bottom electrode, avoiding the use of noble metals, e.g. Pt.
Keywords :
CMOS digital integrated circuits; aluminium compounds; elemental semiconductors; hafnium compounds; high-k dielectric thin films; nickel; random-access storage; semiconductor diodes; silicon; three-dimensional integrated circuits; 3D cross-bar implementation; AlOy-HfOx-Ni; CMOS compatible materials; Si; cycle-to-cycle uniformity; device-to-device uniformity; high-performance unipolar RRAM; high-temperature operating stability; on-off resistance ratio; pulse switching endurance; set-rest speed; silicon diode selector; switching parameters; temperature 120 degC; temperature retention; Electrodes; Hafnium compounds; Nickel; Resistance; Silicon; Switches; Voltage measurement;
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-9949-6
