Title :
Theoretical study of the resistance switching mechanism in rutile TiO2−x for ReRAM: The role of oxygen vacancies and hydrogen impurities
Author :
Park, S.G. ; Magyari-Kope, B. ; Nishi, Yoshio
Author_Institution :
Dept. of Mater. Sci. & Eng., Stanford Univ., Stanford, CA, USA
Abstract :
We study the resistance switching mechanism of rutile TiO2 using ab initio calculations based on DFT. Ordering of the oxygen vacancies substantially increases the conductivity of TiO2 by forming a conductive channel, i.e. “ON”-state. We find that the diffusion of either oxygen or hydrogen atoms into the conductive channel causes the rupture of the conductive filament resulting in the transition from “ON”-state to “OFF”-state.
Keywords :
discrete Fourier transforms; random-access storage; titanium compounds; DFT; ReRAM; TiO2-X; ab initio calculations; conductive channel; conductive filament; hydrogen impurities; resistance switching mechanism; Conductivity; Electrodes; Hydrogen; Ions; Resistance; Switches;
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-9949-6
