• DocumentCode
    549690
  • Title

    Theoretical study of the resistance switching mechanism in rutile TiO2−x for ReRAM: The role of oxygen vacancies and hydrogen impurities

  • Author

    Park, S.G. ; Magyari-Kope, B. ; Nishi, Yoshio

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2011
  • fDate
    14-16 June 2011
  • Firstpage
    46
  • Lastpage
    47
  • Abstract
    We study the resistance switching mechanism of rutile TiO2 using ab initio calculations based on DFT. Ordering of the oxygen vacancies substantially increases the conductivity of TiO2 by forming a conductive channel, i.e. “ON”-state. We find that the diffusion of either oxygen or hydrogen atoms into the conductive channel causes the rupture of the conductive filament resulting in the transition from “ON”-state to “OFF”-state.
  • Keywords
    discrete Fourier transforms; random-access storage; titanium compounds; DFT; ReRAM; TiO2-X; ab initio calculations; conductive channel; conductive filament; hydrogen impurities; resistance switching mechanism; Conductivity; Electrodes; Hydrogen; Ions; Resistance; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2011 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4244-9949-6
  • Type

    conf

  • Filename
    5984625
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=549690