DocumentCode :
549693
Title :
Bi-layered RRAM with unlimited endurance and extremely uniform switching
Author :
Kim, Young-Bae ; Lee, Seung Ryul ; Lee, Dongsoo ; Lee, Chang Bum ; Chang, Man ; Hur, Ji Hyun ; Lee, Myoung-Jae ; Park, Gyeong-Su ; Kim, Chang Jung ; Chung, U-in ; Yoo, In-Kyeong ; Kim, Kinam
Author_Institution :
Samsung Adv. Inst. of Technol., Yongin, South Korea
fYear :
2011
fDate :
14-16 June 2011
Firstpage :
52
Lastpage :
53
Abstract :
We demonstrate resistive random access memory (RRAM) architecture with bi-layered switching element for reliable resistive switching memory. Based on the modulated Schottky barrier modeling, several key functions to achieve a realiable bipolar switching property are extracted. Our device shows an excellent memory performance such as enduracne of 1011 cycles at 30ns, data retention of >;104s at 200°C, and calculated bit error rate below 10-11.
Keywords :
Schottky barriers; integrated circuit reliability; random-access storage; bilayered RRAM; bipolar switching property; data retention; modulated Schottky barrier modeling; resistive random access memory architecture; resistive switching memory reliability; temperature 200 degC; time 30 ns; uniform switching; Electrodes; Materials; Oxidation; Plasmas; Reliability; Resistance; Switches; RRAM; material architecture; nonvolatile memory; resistive switching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
ISSN :
0743-1562
Print_ISBN :
978-1-4244-9949-6
Type :
conf
Filename :
5984628
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=549693
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