Integration of 28nm MJT for 8∼16Gb level MRAM with full investigation of thermal stability

Author

Kim, Y. ; Oh, S.C. ; Lim, W.C. ; Kim, J.H. ; Kim, W.J. ; Jeong, J.H. ; Shin, H.J. ; Kim, K.W. ; Kim, K.S. ; Park, J.H. ; Park, S.H. ; Kwon, H. ; Ah, K.H. ; Lee, J.E. ; Park, S.O. ; Choi, S. ; Kang, H.K. ; Chung, C.

Author_Institution

Semicond. R&D Center, Samsung Electron. Co., Ltd., Hwasung, South Korea

fYear

2011

fDate

14-16 June 2011

Firstpage

210

Lastpage

211

Abstract

28nm MTJ for 8~16Gb MRAM device has been successfully integrated with special patterning & etch technique. Resistance (R) separation between high and low R states was 15.2σ, comparable to that for 80nm MTJ cells. Thermal stability factor (Δ) followed prediction fairly well, and MTJ with free layer (FL) of 25Å and aspect ratio (AR) of 3 showed Δ of 56. In order to realize sub-30nm MRAM device, a novel FL with substantially low critical current density (J_c) or revolutionary MTJ scheme needs to be developed.

Keywords

MRAM devices; current density; thermal stability; FL; MRAM device; Thermal stability factor; current density; free layer; memory size 8 GByte to 16 GByte; patterning-etch technique; resistance separation; revolutionary MTJ scheme; size 28 nm; Anisotropic magnetoresistance; Magnetic tunneling; Resistance; Stability analysis; Switches; Temperature measurement; Thermal stability; 16Gb; 28nm; MRAM; thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2011 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4244-9949-6

Type

conf

Filename

5984636