DocumentCode :
549700
Title :
Strain-engineering for high-performance STT-MRAM
Author :
Iba, Y. ; Tsunoda, K. ; Lee, Y.M. ; Yoshida, C. ; Noshiro, H. ; Takahashi, A. ; Yamazaki, Y. ; Nakabayashi, M. ; Hatada, A. ; Aoki, M. ; Sugii, T.
Author_Institution :
Low-power Electron. Assoc. & Project ( LEAP ), Tsukuba, Japan
fYear :
2011
fDate :
14-16 June 2011
Firstpage :
212
Lastpage :
213
Abstract :
Strain-engineering using the inverse magnetostrictive effect has been performed to improve the performance of spin transfer torque magnetoresistance random access memory (STT-MRAM). The thermal stability factor E/kBT has been enhanced by 40% without increasing a switching current by controlling the process-induced stress in a free layer in MTJ (magnetic tunnel junctions) with mechanically engineered manufacturing steps.
Keywords :
MRAM devices; magnetic tunnelling; thermal stability; MTJ; high-performance STT-MRAM; inverse magnetostrictive effect; magnetic tunnel junctions; process-induced stress; spin transfer torque magnetoresistance random access memory; strain engineering; thermal stability factor; Films; Magnetic tunneling; Magnetostriction; Saturation magnetization; Stress; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
ISSN :
0743-1562
Print_ISBN :
978-1-4244-9949-6
Type :
conf
Filename :
5984637
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=549700
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