Title :
Highly reliable 26nm 64Gb MLC E2NAND (Embedded-ECC & Enhanced-efficiency) flash memory with MSP (Memory Signal Processing) controller
Author :
Shim, Hyunyoung ; Lee, Seaung-Suk ; Kim, Byungkook ; Lee, Namjae ; Kim, Doyoung ; Kim, Hankyum ; Ahn, Byungkeun ; Hwang, Youngho ; Lee, Hoseok ; Kim, Jumsoo ; Lee, Youngbok ; Lee, Heeyoul ; Lee, Juyeab ; Chang, Seungho ; Yang, Joongseob ; Park, Sungkye ;
Author_Institution :
Flash Dev. Div., Hynix Semicond. Inc., Cheongju, South Korea
Abstract :
A highly reliable 26nm 64GB MLC E2NAND (E2: Embedded-ECC & Enhanced-efficiency) flash memory has been successfully developed. To overcome scaling challenges, novel integration and operation technologies, such as 2-dummy word-line (WL) scheme, depletion suppressing process, hydrogen reducing process and Virtual Negative Read (VNR) scheme are introduced. And also, Memory Signal Processing (MSP) controller is used for enhancing performance and reliability. Finally, 5K cycling and 1 year data retention can be greatly achieved.
Keywords :
NAND circuits; flash memories; integrated circuit reliability; 2-dummy WL scheme; 2-dummy word-line scheme; MLC E2NAND flash memory reliability; MSP controller; VNR scheme; data retention; depletion suppressing process; embedded-ECC-enhanced-efficiency flash memory; hydrogen reducing process; memory signal processing controller; memory size 64 GByte; size 26 nm; virtual negative read scheme; Couplings; Error correction codes; Flash memory; Logic gates; Reliability; Signal processing; Very large scale integration; E2NAND; MLC; MSP controller and reliability;
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-9949-6
