• DocumentCode
    549707
  • Title

    1mA/um-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D

  • Author

    Mitard, J. ; Witters, L. ; Hellings, G. ; Krom, R. ; Franco, J. ; Eneman, G. ; Hikavyy, A. ; Vincent, B. ; Loo, R. ; Favia, P. ; Dekkers, H. ; Sanchez, E. Altamirano ; Vanderheyden, A. ; Vanhaeren, D. ; Eyben, P. ; Takeoka, S. ; Yamaguchi, S. ; Van Dal, M

  • fYear
    2011
  • fDate
    14-16 June 2011
  • Firstpage
    134
  • Lastpage
    135
  • Abstract
    A 2nd generation of Implant Free Quantum Well pFETs is presented in this work. SiGe25%-embedded Source/Drain was implemented, leading to an excellent short channel control and logic performance (1mA/um-ION@-1V). No narrow-width effect was found and a multi-VTH strategy is also offered. Performance of the strained-IFQW pFETs was finally demonstrated at lower VDD.
  • Keywords
    Ge-Si alloys; field effect transistors; quantum well devices; semiconductor materials; SiGe; channel control; embedded S-D; embedded source-drain; implant free quantum well pFET; logic performance; multiVTH strategy; raised S-D; strained-IFQW pFET; Benchmark testing; Doping; Electrostatic discharge; Logic gates; Performance evaluation; Silicon; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2011 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4244-9949-6
  • Type

    conf

  • Filename
    5984645
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=549707