DocumentCode :
549710
Title :
An Ultra Low-Noise MOSFET device with improved SNR for DCO-type applications
Author :
Srinivasan, P. ; Tsao, A. ; Nayak, N. ; Marshall, A.
Author_Institution :
Texas Instrum., Dallas, TX, USA
fYear :
2011
fDate :
14-16 June 2011
Firstpage :
224
Lastpage :
225
Abstract :
An Ultra-Low Noise (ULN) MOSFET device used as a gm-pair in a DCO circuit is presented. Device 1/f noise reduces by >;12X while circuit SNR improves by >;1.2dB for an optimized process. While strong process correlation for device 1/f noise is seen, a weak correlation at circuit level is noticed. Noise is primarily dependent on halo implant conditions while SNR dispersion is influenced by Fluorine (F) addition. Overall, the ULN device improves SNR yield by ~3% and the optimized circuit-and-device performance is seen for reduced-halo and no-F process condition.
Keywords :
MOSFET; circuit optimisation; oscillators; DCO circuit; DCO-type applications; SNR dispersion; ULN MOSFET device; circuit-and-device performance; fluorine addition; halo implant conditions; ultralownoise MOSFET device; Correlation; MOSFET circuits; Noise reduction; Performance evaluation; Signal to noise ratio; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
ISSN :
0743-1562
Print_ISBN :
978-1-4244-9949-6
Type :
conf
Filename :
5984649
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=549710
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