An Ultra Low-Noise MOSFET device with improved SNR for DCO-type applications

Author

Srinivasan, P. ; Tsao, A. ; Nayak, N. ; Marshall, A.

Author_Institution

Texas Instrum., Dallas, TX, USA

fYear

2011

fDate

14-16 June 2011

Firstpage

224

Lastpage

225

Abstract

An Ultra-Low Noise (ULN) MOSFET device used as a g_m-pair in a DCO circuit is presented. Device 1/f noise reduces by >;12X while circuit SNR improves by >;1.2dB for an optimized process. While strong process correlation for device 1/f noise is seen, a weak correlation at circuit level is noticed. Noise is primarily dependent on halo implant conditions while SNR dispersion is influenced by Fluorine (F) addition. Overall, the ULN device improves SNR yield by ~3% and the optimized circuit-and-device performance is seen for reduced-halo and no-F process condition.

Keywords

MOSFET; circuit optimisation; oscillators; DCO circuit; DCO-type applications; SNR dispersion; ULN MOSFET device; circuit-and-device performance; fluorine addition; halo implant conditions; ultralownoise MOSFET device; Correlation; MOSFET circuits; Noise reduction; Performance evaluation; Signal to noise ratio; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2011 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4244-9949-6

Type

conf

Filename

5984649

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=549710