A 1.4µA reset current phase change memory cell with integrated carbon nanotube electrodes for cross-point memory application

A cross-point phase change memory (PCM) cell working close to its ultimate scaling limit is demonstrated for the first time with an ultra low reset current of 1.4μA and set current of 0.5μA. This is the lowest value ever reported. Carbon nanotubes (CNTs) are utilized as the bottom electrode of the cell, which bring the lithography-independent critical dimension down to 1.2 nm. Good electrical characteristics obtained demonstrate the functionality and potential viability of PCM for highly scaled ultra-dense memory at 2.5 nm node.