Comparison of performance, switching energy and process variations for the TFET and MOSFET in logic

A detailed circuit assessment of Tunneling Field Effect Transistors (TFET) versus MOSFET operating near device threshold supply voltage, including the consideration of process variations, is reported. The analysis incorporates simulated 20 nm TFET and MOSFET device characteristics combined with detailed circuit simulation. For very low power logic applications requiring near device threshold supply voltage, the results show that TFET logic can operate at equal standby power and switching energy to MOSFET, but with a ~8x performance advantage. The study also shows that device parameter variation is not a significant factor for differentiation between MOSFET and TFET.