Title :
Stress-induced performance enhancement in Si ultra-thin body FD-SOI MOSFETs: Impacts of scaling
Author :
Xu, Nuo ; Andrieu, Francois ; Jeon, Jaeseok ; Sun, Xin ; Weber, Olivier ; Poiroux, Thierry ; Nguyen, Bich-yen ; Faynot, Olivier ; Liu, Tsu-Jae King
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
A detailed study of the impact of channel stress on (100)/<;110>; Ultra-Thin Body and BOX (UT2B) Fully Depleted SOI (FD-SOI) MOSFET performance is presented. Stress-induced mobility enhancement diminishes with Si body thickness scaling below 5nm for electrons but not for holes. Performance enhancement is maintained with gate-length scaling.
Keywords :
MOSFET; silicon; silicon-on-insulator; stress analysis; Si; Si ultra-thin body FD-SOI MOSFET; channel stress; fully depleted SOI; gate-length scaling; stress-induced mobility enhancement; stress-induced performance enhancement; Charge carrier processes; Logic gates; MOSFETs; Scattering; Silicon; Stress; Temperature measurement;
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-9949-6
