DocumentCode
549742
Title
Electronic global shutter CMOS image sensor using oxide semiconductor FET with extremely low off-state current
Author
Aoki, Takeshi ; Ikeda, Masataka ; Kozuma, Munehiro ; Tamura, Hikaru ; Kurokawa, Yoshiyuki ; Ikeda, Takayuki ; Endo, Yuta ; Maruyama, Tetsunori ; Matsumoto, Noriko ; Ieda, Yoshinori ; Isobe, Atsuo ; Koyama, Jun ; Yamazaki, Shunpei
Author_Institution
Semicond. Energy Lab. Co., Ltd., Atsugi, Japan
fYear
2011
fDate
14-16 June 2011
Firstpage
174
Lastpage
175
Abstract
A novel CMOS image sensor including a pixel with a hybrid structure of an oxide semiconductor FET (OS-FET) and Si(SOI)-FETs has been developed. The OS-FET has an extremely low off-state current, and thus can form a highly insulating charge storage node in combination with SOI. We have therefore applied the OS-FET to an electronic global shutter CMOS image sensor and confirmed improvement in imaging quality.
Keywords
CMOS image sensors; field effect transistors; silicon-on-insulator; Si(SOI)-FET; electronic global shutter CMOS image sensor; extremely low off-state current; imaging quality; oxide semiconductor FET; CMOS image sensors; Films; Leakage current; Logic gates; Silicon; Transistors; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location
Honolulu, HI
ISSN
0743-1562
Print_ISBN
978-1-4244-9949-6
Type
conf
Filename
5984691
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