Title :
3D approaches for non-volatile memory
Author :
Choi, Jungdal ; Seol, Kwang Soo
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Ltd., Hwasung, South Korea
Abstract :
The NAND flash market is continuously growing by the successive introduction of innovative devices and applications. To meet the market trend, 3-dimenstional (3D) non-volatile memories (NVMs) are expected to replace the planar one, especially for 10 nm-nodes and beyond. Therefore, the fundamentals and current status of the 3D NAND flash memory are reviewed and future directions are discussed.
Keywords :
NAND circuits; flash memories; random-access storage; three-dimensional integrated circuits; 3-dimenstional NVM; 3D NAND flash memory; 3D nonvolatile memory; Couplings; Flash memory; Lithography; Logic gates; Materials; Nonvolatile memory; Three dimensional displays; NAND flash and 3D NVMs;
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-9949-6
