Title :
Comprehensive study of systematic and random variation in Gate-Induced Drain Leakage for LSTP applications
Author :
Shimizu, S. ; Aikawa, H. ; Okamoto, S. ; Kakehi, K. ; Ohsawa, K. ; Yoshimura, H. ; Asami, T. ; Ishimaru, K.
Author_Institution :
Adv. Logic Technol. Dept., Toshiba Corp. Semicond. Co., Oita, Japan
Abstract :
Systematic and random variability of Gate-Induced Drain Leakage (GIDL) current have been studied for the first time. Trap-assisted tunneling current shows more instability than band-to-band tunneling current in every kinds of variations resulting from high sensitivity of the traps to impurities under MOSFET channel.
Keywords :
MOSFET; leakage currents; GIDL current; LSTP applications; MOSFET channel; band-to-band tunneling current; gate-induced drain leakage; random variability; trap-assisted tunneling current; Current measurement; Junctions; Logic gates; MOS devices; Systematics; Tunneling; Very large scale integration; BTBT; GIDL; TAT; variation;
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-9949-6
