Title :
Comprehensive understanding of random telegraph noise with
Author :
Higashi, Y. ; Momo, N. ; Momose, H.S. ; Ohguro, T. ; Matsuzawa, K.
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
Physical modeling of transient and frequency domain noise simulation for random telegraph noise (RTN) is conducted, considering discretized traps and energy transition in insulator. The models are implemented in a 3D device simulator to consider the device structure effect and bias effect universally. Trap density and trap distribution in insulator are predicted quantitatively with comparison of measured data and simulated data. In addition, we present negative pre-pulse effect for RTN reduction.
Keywords :
frequency-domain analysis; insulators; integrated circuit modelling; integrated circuit reliability; random noise; transient analysis; 3D device simulator; RTN reduction; bias effect; device structure effect; discretized traps; energy transition; frequency domain noise simulation; insulator; physics-based simulation; random telegraph noise; transient noise simulation; trap density; trap distribution; Current measurement; Electron traps; Frequency domain analysis; Insulators; MOS devices; Mathematical model; Noise;
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-9949-6
