Title :
A new approach of NAND flash cell trap analysis using RTN characteristics
Author :
Daewoong Kang ; Sungbok Lee ; Hyun-Mog Park ; Dong-Jun Lee ; Jun Kim ; Junho Seo ; Chikyoung Lee ; Cheol Song ; Chang-Sub Lee ; Hyungcheol Shin ; Jaihyuk Song ; Haebum Lee ; Jeong-Hyuk Choi ; Young-Hyun Jun
Author_Institution :
Flash Dev. Center, Samsung Electron. Co., Yongin, South Korea
Abstract :
We measured RTN characteristics in NAND flash cell array and test structure having 27 nm design rule depending on different program and erase states. From these measured results, we analyzed the trap properties along the active width direction from of NAND flash cell. Using special analysis methods, we verified the validity of this characterization tool and applied it to various processed NAND flash memory cells.
Keywords :
NAND circuits; flash memories; integrated circuit design; integrated circuit testing; logic design; NAND flash cell array; NAND flash cell trap analysis; RTN characteristics; design rule; program-erase states; test structure; Electric fields; Etching; Flash memory; Fluctuations; Threshold voltage; Time measurement; Very large scale integration;
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-9949-6
