DocumentCode :
549839
Title :
A fast rewritable 90nm 512Mb NOR “B4-Flash” memory with 8F2 cell size
Author :
Ogura, T. ; Mihara, M. ; Kawajiri, Y. ; Kobayashi, K. ; Sakaniwa, T. ; Nishikawa, K. ; Shimizu, S. ; Shukuri, S. ; Ajika, N. ; Nakashima, M.
Author_Institution :
GENUSION, Inc., Amagasaki, Japan
fYear :
2011
fDate :
15-17 June 2011
Firstpage :
198
Lastpage :
199
Abstract :
This paper introduces a first 512Mb B4-Flash product chip with 8F2 cell size, which is the smallest NOR cell in the 90nm generation. High rewriting throughput (~8MB/s) is realized by 10MB/s programming and 100ms/block erasing without over-erase problem. 10MB/s programming is achieved by 1kB simultaneous programming and proposed fast verify scheme. This work proves that B4-Flash can realize not only high rewriting performance like NAND Flash but also fast random access like conventional NOR Flash.
Keywords :
NAND circuits; NOR circuits; flash memories; B4-Flash product chip; NAND Flash; NOR Flash; rewritable B4-Flash memory; rewriting throughput; size 90 nm; Arrays; Flash memory; Memory architecture; Microprocessors; Programming; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits (VLSIC), 2011 Symposium on
Conference_Location :
Honolulu, HI
ISSN :
2158-5601
Print_ISBN :
978-1-61284-175-5
Type :
conf
Filename :
5986103
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=549839
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