• DocumentCode
    549839
  • Title

    A fast rewritable 90nm 512Mb NOR “B4-Flash” memory with 8F2 cell size

  • Author

    Ogura, T. ; Mihara, M. ; Kawajiri, Y. ; Kobayashi, K. ; Sakaniwa, T. ; Nishikawa, K. ; Shimizu, S. ; Shukuri, S. ; Ajika, N. ; Nakashima, M.

  • Author_Institution
    GENUSION, Inc., Amagasaki, Japan
  • fYear
    2011
  • fDate
    15-17 June 2011
  • Firstpage
    198
  • Lastpage
    199
  • Abstract
    This paper introduces a first 512Mb B4-Flash product chip with 8F2 cell size, which is the smallest NOR cell in the 90nm generation. High rewriting throughput (~8MB/s) is realized by 10MB/s programming and 100ms/block erasing without over-erase problem. 10MB/s programming is achieved by 1kB simultaneous programming and proposed fast verify scheme. This work proves that B4-Flash can realize not only high rewriting performance like NAND Flash but also fast random access like conventional NOR Flash.
  • Keywords
    NAND circuits; NOR circuits; flash memories; B4-Flash product chip; NAND Flash; NOR Flash; rewritable B4-Flash memory; rewriting throughput; size 90 nm; Arrays; Flash memory; Memory architecture; Microprocessors; Programming; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits (VLSIC), 2011 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    2158-5601
  • Print_ISBN
    978-1-61284-175-5
  • Type

    conf

  • Filename
    5986103
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=549839