Title :
Electrical monitoring of gate and active area mask misalignment error
Author :
Bansal, Aditya ; Singhee, Amith ; Acar, Emrah ; Costrini, Greg
Author_Institution :
Thomas J. Watson Res. Center, IBM, Yorktown Heights, NY, USA
Abstract :
A model-free, gate-diffusion (PC-RX) misalignment monitor circuit is implemented in 32nm CMOS for fabrication tool and layout ground rule characterization. It requires only DC current measurements compared to existing optical methods that require special microscopy equipment. An on-chip circuit is also designed to convert misalignment to digital data to enable post-Si repair.
Keywords :
CMOS digital integrated circuits; SRAM chips; monitoring; CMOS; DC current measurements; SRAM cell; active area mask misalignment error; electrical monitoring; layout ground rule characterization; model-free gate-diffusion misalignment monitor circuit; on-chip circuit; optical methods; size 32 nm; Current measurement; Decoding; FETs; Fabrication; Layout; Logic gates; Optical variables measurement;
Conference_Titel :
VLSI Circuits (VLSIC), 2011 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-61284-175-5
