DocumentCode :
549882
Title :
A 100dB DR ground-referenced single-ended Class-D amplifier in 65nm CMOS
Author :
Jiang, Xicheng ; Song, Jungwoo ; Wang, Minsheng ; Chen, Jianlong ; Zheng, Hui ; Galal, Sherif ; Abdelfattah, Khaled ; Brooks, Todd L.
Author_Institution :
Broadcom Corp., Irvine, CA, USA
fYear :
2011
fDate :
15-17 June 2011
Firstpage :
58
Lastpage :
59
Abstract :
A ground-referenced Class-D headset amplifier combines digital PWM and analog PWRM schemes. The closed-loop analog driver includes a feed-forward path and a T-bridge power stage. The single-ended amplifier in 65nm CMOS achieves 100dB DR, 82dB PSRR and 80% efficiency with an integrated charge pump.
Keywords :
CMOS analogue integrated circuits; feedforward amplifiers; pulse width modulation; CMOS; T-bridge power stage; analog PWRM; closed-loop analog driver; digital PWM; feedforward path; gain 100 dB; ground-referenced Class-D headset amplifier; integrated charge pump; size 65 nm; Batteries; Charge pumps; Digital filters; Generators; Manganese; Pulse width modulation; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits (VLSIC), 2011 Symposium on
Conference_Location :
Honolulu, HI
ISSN :
2158-5601
Print_ISBN :
978-1-61284-175-5
Type :
conf
Filename :
5986423
Link To Document :
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