Title :
A non-volatile look-up table design using PCM (phase-change memory) cells
Author :
Wen, C.-Y. ; Li, J. ; Kim, S. ; Breitwisch, M. ; Lam, C. ; Paramesh, J. ; Pileggi, L.T.
Author_Institution :
ECE Dept., Carnegie Mellon Univ., Pittsburgh, PA, USA
Abstract :
This paper describes the design and fabrication of a digital look-up table (LUT) circuit using phase-change random access memory (PCRAM) cells. The LUT, fabricated in IBM 90 nm CMOS technology with embedded GST (Ge2Sb2Te5)-based phase-change memory (PCM) mushroom cell, performs programmable and non-volatile logic functions with a 1V supply. The PCRAM cell provides >; 100X resistance transformation ratio and the LUT achieves a 453.4ps (average) propagation delay.
Keywords :
CMOS memory circuits; antimony compounds; chalcogenide glasses; germanium compounds; logic circuits; phase change memories; programmable circuits; random-access storage; tellurium compounds; CMOS technology; Ge2Sb2Te5; PCM mushroom cell; digital look-up table circuit; nonvolatile logic functions; nonvolatile look-up table design; phase-change memory; programmable logic functions; resistance transformation ratio; size 90 nm; voltage 1 V; CMOS integrated circuits; Logic gates; Phase change materials; Phase change random access memory; Resistance; Table lookup;
Conference_Titel :
VLSI Circuits (VLSIC), 2011 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-61284-175-5
