DocumentCode :
55025
Title :
Improvement of SOI Trench LDMOS Performance With Double Vertical Metal Field Plate
Author :
Chao Xia ; Xinhong Cheng ; Zhongjian Wang ; Dawei Xu ; Duo Cao ; Li Zheng ; Lingyang Shen ; Yuehui Yu ; Dashen Shen
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Volume :
61
Issue :
10
fYear :
2014
fDate :
Oct. 2014
Firstpage :
3477
Lastpage :
3482
Abstract :
In this paper, a novel high-voltage trench lateral double-diffused metal-oxide-semiconductor field effect transistor (TLDMOS) based on silicon-on-insulator technology is proposed. The new structure is characterized by a double vertical metal field plate (DVFP) in the oxide trench, which is surrounded by heavily doped N/P pillars [superjuction (SJ)]. The DVFP introduces five new electric field peaks in the bulk of drift region compared with the conventional TLDMOS, leading to the breakdown voltage (BV) increase. Furthermore, the DVFP and SJ provide an electrons accumulation layer at the interface of the N pillar and oxide trench under the ON-state, reducing the specific ON-resistance (RON). With the 2-D device simulation, a BV of 840 V and a RON of 60.2 mQ · cm2 are realized on a 25-μm-thick SOI layer and 0.5 μm buried oxide layer, and the Baliga´s figure of merit [(FOM), FOM = BV2/RON] of 11.4 MW/cm2 is achieved, breaking through the silicon limit.
Keywords :
MOSFET; semiconductor device breakdown; silicon-on-insulator; 2D device simulation; Baliga figure of merit; DVFP; SOI trench LDMOS; TLDMOS; breakdown voltage; buried oxide layer; double vertical metal field plate; drift region; silicon-on-insulator; size 0.5 mum; size 25 mum; trench lateral double-diffused metal oxide semiconductor field effect transistor; voltage 840 V; Doping; Electric breakdown; Electron devices; Metals; Performance evaluation; Silicon; Silicon-on-insulator; Field plate; SOI-trench lateral double-diffused metal–oxide–semiconductor field effect transistor (SOI-TLDMOS); SOI-trench lateral double-diffused metal??oxide??semiconductor field effect transistor (SOI-TLDMOS); reduced surface field (RESURF); silicon-on-insulator (SOI);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2014.2349553
Filename :
6891321
Link To Document :
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