DocumentCode :
551308
Title :
Patterned growth of AlN nanowires and investigation on their field emission properties
Author :
Su, Zanjia ; Liu, Fei ; Li, Lifang ; Guo, Tongyi ; Gan, Haibo ; Chen, Jun ; Deng, Shaozhi ; Xu, Ningsheng
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
fYear :
2011
fDate :
18-22 July 2011
Firstpage :
41
Lastpage :
42
Abstract :
AlN nanowires have low electron affinity, which has been considered as one of the ideal cathode materials in future. Although many methods have been developed to prepare AlN nanowires with different morphologies, little effort is found to focus on the patterned growth technique, which has limited their applicaitions. Here we provide a ceramic template method to fabricate patterned AlN nanowire arrays, which have better field emission performance than the continuous nanowire film.
Keywords :
III-V semiconductors; aluminium compounds; electron affinity; field emission; nanofabrication; nanopatterning; nanowires; semiconductor growth; wide band gap semiconductors; AlN; cathode materials; ceramic template method; electron affinity; field emission properties; morphology; nanowire film; nanowire patterned growth; Ceramics; Films; Iron; Morphology; Nanowires; Substrates; AlN nanowires; field emission; patterned growth;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2011 24th International
Conference_Location :
Wuppertal
ISSN :
pending
Print_ISBN :
978-1-4577-1243-2
Electronic_ISBN :
pending
Type :
conf
Filename :
6004552
Link To Document :
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