Optically controllable emitter array with pn-junction integrated Si tip

Author

Tanaka, Yujiro ; Miyashita, Hidetoshi ; Tomono, Eiichi ; Esashi, Masayoshi ; Ono, Takahito

Author_Institution

Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan

fYear

2011

fDate

18-22 July 2011

Firstpage

57

Lastpage

58

Abstract

In this paper, a Si field emitter array with an ability of the optical switching of electron emission has been developed. Each emitter has pn junction at the apex to control emission current optically. Experiments of optical switching of electron emission have been demonstrated successfully. This concept of the optical control of emission can reduce the number of metal wires on the emission device; therefore, a high density emitter array can be achieved.

Keywords

electron beam lithography; field emitter arrays; optical switches; p-n junctions; silicon; Si; electron beam lithography; electron emission; field emitter array; optical switching; optically controllable emitter array; pn-junction integrated Si tip; Arrays; Electrodes; Junctions; Logic gates; Optical switches; Silicon; Stimulated emission; electron emission; emitter array; microfabrication; multi electron beam lithography; optical control;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2011 24th International

Conference_Location

Wuppertal

ISSN

pending

Print_ISBN

978-1-4577-1243-2

Electronic_ISBN

pending

Type

conf

Filename

6004560