• DocumentCode
    551327
  • Title

    CsBr- InN/GaN photocathodes examined with photoelectron emission microscopy

  • Author

    Vaughn, Joel M. ; Wan, Congshang ; Kordesch, Martin E.

  • Author_Institution
    Dept. of Phys. & Astron., Ohio Univ., Athens, OH, USA
  • fYear
    2011
  • fDate
    18-22 July 2011
  • Firstpage
    81
  • Lastpage
    82
  • Abstract
    A promising cathode type is the CsBr/GaN photocathode (PC). These cathodes are constructed by depositing a CsBr layer on sputter deposited GaN or InN. The use of InGaN or InN substrates rather than GaN means that the photoelectrons can be excited by visible photons.
  • Keywords
    gallium compounds; indium compounds; photocathodes; photoelectron microscopy; sputter deposition; substrates; CsBr-InN-GaN; InGaN substrates; InN substrates; photocathodes; photoelectron emission microscopy; photoelectrons; sputter deposited GaN; Absorption; Cathodes; Gallium nitride; Optical films; Photonic band gap; Substrates; CsBr; GaN; InN; photocathode;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2011 24th International
  • Conference_Location
    Wuppertal
  • ISSN
    pending
  • Print_ISBN
    978-1-4577-1243-2
  • Electronic_ISBN
    pending
  • Type

    conf

  • Filename
    6004572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=551327